? semiconductor components industries, llc, 1997 october, 2016 ? rev. 15 1 publication order number: bc817?16lt1/d bc817-16l, sbc817-16l, bc817-25l, sbc817-25l, bc817-40l, sbc817-40l general purpose transistors npn silicon features ? s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 45 v collector ? base voltage v cbo 50 v emitter ? base voltage v ebo 5.0 v collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?65 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information collector 3 1 base 2 emitter sot?23 case 318 style 6 1 2 3 1 6x m 6x = device code x = a, b, or c m = date code* = pb?free package marking diagram (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. www. onsemi.com
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma) v (br)ceo 45 ? ? v collector ?emitter breakdown voltage (v eb = 0, i c = 10 a) v (br)ces 50 ? ? v emitter ?base breakdown voltage (i e = 1.0 a) v (br)ebo 5.0 ? ? v collector cutoff current (v cb = 20 v) (v cb = 20 v, t a = 150 c) i cbo ? ? ? ? 100 5.0 na a on characteristics dc current gain (i c = 100 ma, v ce = 1.0 v) bc817?16, sbc817?16 bc817?25, sbc817?25 bc817?40, sbc817?40 (i c = 500 ma, v ce = 1.0 v) h fe 100 160 250 40 ? ? ? ? 250 400 600 ? ? collector ?emitter saturation voltage (i c = 500 ma, i b = 50 ma) v ce(sat) ? ? 0.7 v base ?emitter on voltage (i c = 500 ma, v ce = 1.0 v) v be(on) ? ? 1.2 v small? signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? 10 ? pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. ordering information device specific marking package shipping ? bc817?16lt1g 6a sot?23 (pb?free) 3000 / tape & reel nsvbc817?16lt1g bc817?16lt3g 10,000 / tape & reel sbc817?16lt3 bc817?25lt1g 6b sot?23 (pb?free) 3000 / tape & reel sbc817?25lt1g bc817?25lt3g 10,000 / tape & reel sbc817?25lt3g bc817?40lt1g 6c sot?23 (pb?free) 3000 / tape & reel sbc817?40lt1g bc817?40lt3g 10,000 / tape & reel sbc817?40lt3g ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 3 typical characteristics ? bc817?16l, sbc817?16l figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 1 0.1 0.01 0.001 0.01 0.1 1 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 i c /i b = 10 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 4 typical characteristics ? bc817?16l, sbc817?16l i b , base current (ma) figure 5. saturation region 100 10 1 v r , reverse voltage (volts) figure 6. temperature coefficients +1 i c , collector current (ma) figure 7. capacitances 0.1 1 1 10 100 1000 -2 -1 0 v ce , collector-emitter voltage (volts) v , temperature coefficients (mv/ c) c, capacitance (pf) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 10 100 t j = 25 c i c = 10 ma vc for v ce(sat) vb for v be c ob c ib 100 ma 300 ma 500 ma
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 5 typical characteristics ? bc817?25l, sbc817?25l figure 8. dc current gain vs. collector current figure 9. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 500 1 0.1 0.01 0.001 0.01 0.1 1 figure 10. base emitter saturation voltage vs. collector current figure 11. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 i c /i b = 10 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c figure 12. current gain bandwidth product vs. collector current i c , collector current (ma) 1000 10 1 0.1 10 100 f t , current?gain?bandwidth product (mhz) v ce = 1 v t a = 25 c 1000 100
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 6 typical characteristics ? bc817?25l, sbc81725l i b , base current (ma) figure 13. saturation region 100 10 1 v r , reverse voltage (volts) figure 14. temperature coefficients +1 i c , collector current (ma) figure 15. capacitances 0.1 1 1 10 100 1000 -2 -1 0 v ce , collector-emitter voltage (volts) v , temperature coefficients (mv/ c) c, capacitance (pf) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 10 100 t j = 25 c i c = 10 ma vc for v ce(sat) vb for v be c ob c ib 100 ma 300 ma 500 ma
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 7 typical characteristics ? bc817?40l, sbc817?40l figure 16. dc current gain vs. collector current figure 17. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 700 1 0.1 0.01 0.001 0.001 0.1 1 figure 18. base emitter saturation voltage vs. collector current figure 19. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 i c /i b = 10 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c figure 20. current gain bandwidth product vs. collector current i c , collector current (ma) 1000 10 1 0.1 10 100 f t , current?gain?bandwidth product (mhz) v ce = 1 v t a = 25 c 1000 100 500 600 0.01
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 8 typical characteristics ? bc817?40l, sbc817?40l i b , base current (ma) figure 21. saturation region 100 10 1 v r , reverse voltage (volts) figure 22. temperature coefficients +1 i c , collector current (ma) figure 23. capacitances 0.1 1 1 10 100 1000 -2 -1 0 v ce , collector-emitter voltage (volts) v , temperature coefficients (mv/ c) c, capacitance (pf) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 10 100 t j = 25 c i c = 10 ma vc for v ce(sat) vb for v be c ob c ib 100 ma 300 ma 500 ma
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 9 typical characteristics ? bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l figure 24. safe operating area 1 v ce (vdc) 1 0.1 0.1 0.01 10 100 0.01 0.001 i c (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms
bc817?16l, sbc817?16l, bc817?25l, sbc817?25l, bc817?40l, sbc817?40l www. onsemi.com 10 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended style 6: pin 1. base 2. emitter 3. collector *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc817?16lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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